SK hynix has announced the completion of the development of the most advanced DDR5 DRAM in the industry, using 10-nanometer technology for servers. The company has entered into a validation process with Intel to test the chip on Intel Xeon Scalable platforms. The chips have a speed of 6.4 gigabits per second, which is 33% faster than previous chips, and is equipped with High-K Metal Gate technology, reducing energy consumption by over 20%. SK hynix plans to offer high-performance and performance-per-watt DRAM products to its global clients via the advanced process. The company is undergoing an additional validation process to apply its fourth-generation DDR5 product onto the next generation of the Intel Xeon Scalable platform. SK hynix’s DRAM development head, Kim Jong-hwan, confirmed that he plans to apply the cutting-edge process to a wide range of products such as LPDDR5T, mobile DRAM memory chips, and HBM3E, the fifth-generation high bandwidth memory product.
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